Boosting memory performance by robust ion bombardment — ScienceDaily

A short while ago, new engineering has emerged that substantially improves the efficiency of flash memory by a powerful ion bombardment system. This memory platform can reliably categorical numerous facts in a one system, rendering it applicable for potential neuromorphic computing as well as expanding memory capability.

POSTECH professor Yoonyoung Chung (Division of Electrical Engineering and Division of Semiconductor Engineering) and Ph.D. prospect Seongmin Park (Section of Electrical Engineering), in joint investigation with Samsung Electronics, have developed a flash memory with increased data storage by intentionally building flaws.

As synthetic intelligence engineering advances, establishing a novel semiconductor product optimized for the neural network with multilevel data is required. New supplies and units have been developed as neuromorphic units but have limitations in toughness, scalability, and storage potential compared to flash memory, which has been commonly applied as a storage unit for many applications.

To triumph over these troubles, the investigate team carried out a powerful plasma bombardment procedure during the deposition of the info-storage layer to produce synthetic defect web pages in a flash memory gadget. The scientists verified that a lot more electrons can be saved in created defects, dramatically rising the quantity of information storage compared to regular flash memory.

A memory with a number of levels of info can be demonstrated when the electrons are progressively filled in the knowledge storage layer in which many flaws are generated. The multilevel flash memory made in this research can reliably distinguish eight information amounts.

The findings from the analyze are major in that they can limit the hazard of producing a new semiconductor substance or composition and, at the identical time, appreciably advance flash memory with outstanding functionality and scalability for AI apps. When applied to neuromorphic techniques, inference precision and trustworthiness are envisioned to be drastically improved when compared to conventional devices.

Just lately published in Products Now Nano, a renowned intercontinental tutorial journal in the field of nanotechnology, this study was supported by Samsung Electronics and the Subsequentgeneration Intelligence-Variety Semiconductor Development Program.

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